? 221 west industry court ? deer park, ny 11729-4681 ? phone (631) 586-7600 ? fax (631) 242-9798 ? ? world wide web site - http://www.sensitron.com ? e-mail address - sales@sensitron.com ? sensitron semiconductor technical data datasheet 290, rev. - hermetic power schottky rectifier ultra low reverse leakage 200 c operating temperature applications: ? switching power supply ? converters ? free-wheeling diodes ? polarity protection diode features: ? ultra low reverse leakage current ? soft reverse recovery at low and high temperature ? very low forward voltage drop ? low power loss, high efficiency ? high surge capacity ? guard ring for enhanced durability and long term reliability ? guaranteed reverse avalanche characteristics maximum ratings all ratings are @ t c = 25 c unless otherwise specified. rating symbol max. units peak inverse voltage piv 100 volts maximum dc output current (with cathode maintained @ t c =100 o c) i o 120 amps maximum nonrepetitive forward surge current (t = 8.3ms, sine) i fsm 1650 amps maximum junction capacitance (v r =5v) c t 3000 pf maximum thermal resistance (junction to mounting surface, cathode) r jc 0.20 c/w maximum operating junction temperature range top -65 to +200 c maximum storage temperature range tstg -65 to +175 c electrical characteristics characteristic symbol max. units maximum forward voltage drop, pulsed (i f = 120 amps) t j = 25 c t j = 125 c v f 0.87 0.72 volts maximum reverse current (i r @ 100 v piv) t j = 25 c t j = 125 c i r 0.60 6.0 ma shd114634 shd114634a SHD114634B
? 221 west industry court ? deer park, ny 11729-4681 ? phone (631) 586-7600 ? fax (631) 242-9798 ? ? world wide web site - http://www.sensitron.com ? e-mail address - sales@sensitron.com ? sensitron technical data datasheet 290, rev. - mechanical dimensions: in inches / mm pinout table type pin 1 (base) pin 2 single rectifier cathode anode 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 forward voltage drop - v f (v) 10 -2 10 -1 10 0 10 1 10 2 instantaneous forward current - i f (a) typical forward characteristics 125 c 200 c 175 c 25 c 0 20 40 60 80 100 120 reverse voltage - v r (v) 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 instantaneous reverse current - i r (ma) typical reverse characteristics 25 c 50 c 75 c 100 c 125 c 150 c 200 c 175 c 0 20406080100120 reverse voltage - v r (v) 500 1000 1500 2000 2500 junction capacitance - c t (pf) typical junction capacitance shd114634 shd114634a SHD114634B .200.010 (5.08 .254) .410.010 (10.4.254) .075 (1.91) max alumina ring .410.010 (10.4.254) .550.020 (14.0.508) moly lid moly base (cathode) .060.010 ( 1.52.254 ) .020.002 (.508.051) .020.005 r (.508.127 ) moly anode .075 (1.91) max .410.010 (10.4.254) moly lid mol y base .410.010 (10.4.254) alumina ring .090 (2.29) max alumina ring moly base (cathode) .060.010 (1.52.254) .015.002 (.381.051) .020.005 r (.508.127 ) .410.010 ( 10.4.254 ) .150.010 ( 3.81.254 ) . 560 . 020 (14.2.508) .410.010 ( 10.4.254 ) .015.005 (.381.127) co pp er anode shd-3 shd-3a shd-3b
? 221 west industry court ? deer park, ny 11729-4681 ? phone (631) 586-7600 ? fax (631) 242-9798 ? ? world wide web site - http://www.sensitron.com ? e-mail address - sales@sensitron.com ? sensitron technical data datasheet 290, rev. - shd114634 shd114634a SHD114634B disclaimer: 1- the information given herein, including the specifications and dimens ions, is subject to change wi thout prior notice to impr ove product characteristics. before ordering, purchas ers are advised to contact the sensitron semiconductor sales department for the latest version of the datasheet(s). 2- in cases where extremely high reliabilit y is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety shoul d be ensured by using semiconduc tor devices that feature assured safety or by m eans of users? fail-safe precautions or other arrangement . 3- in no event shall sensitron semiconducto r be liable for any damages that may result from an accident or any other cause duri ng operation of the user?s units according to the datas heet(s). sensitron semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of info rmation, products or circuits described in the datasheets. 4- in no event shall sensitron semiconduc tor be liable for any failure in a semic onductor device or any secondary damage result ing from use at a value exceeding the absolute maximum rating. 5- no license is granted by the datasheet(s) under any patents or other rights of any th ird party or sensitron semiconductor. 6- the datasheet(s) may not be reproduced or duplicated, in any fo rm, in whole or part, without the expressed written permissio n of sensitron semiconductor. 7- the products (technologies) de scribed in the datasheet(s) are not to be provi ded to any party whose purpose in their applica tion will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any thir d party. when exporting these products (t echnologies), the necessary procedur es are to be taken in accordance with related laws and regulatio ns.
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